An experimental study on channel backscattering in high-k/metal gate nMOSFETs

التفاصيل البيبلوغرافية
العنوان: An experimental study on channel backscattering in high-k/metal gate nMOSFETs
المؤلفون: Sagong, Hyun Chul, Kang, Chang Yong, Sohn, Chang-Woo, Jeong, Eui-Young, Choi, Do-Young, Lee, Sang-Hyun, Kim, Ye-Ram, Jang, Jun-Woo, Jeong, Yoon-Ha
المصدر: 2012 IEEE International Integrated Reliability Workshop Final Report Integrated Reliability Workshop Final Report (IRW), 2012 IEEE International. :171-174 Oct, 2012
Relation: 2012 IEEE International Integrated Reliability Workshop (IIRW)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9781467327497
9781467327510
9781467327527
تدمد:19308841
23748036
DOI:10.1109/IIRW.2012.6468948