Gate-all-around Si nanowire array tunnelling FETs with high on-current of 75 µA/µm @ VDD=1.1V

التفاصيل البيبلوغرافية
العنوان: Gate-all-around Si nanowire array tunnelling FETs with high on-current of 75 µA/µm @ VDD=1.1V
المؤلفون: Knoll, Lars, Richter, S., Nichau, A., Schafer, A., Bourdelle, K. K., Zhao, Q. T., Mantl, S.
المصدر: 2013 14th International Conference on Ultimate Integration on Silicon (ULIS) Ultimate Integration on Silicon (ULIS), 2013 14th International Conference on. :97-100 Mar, 2013
Relation: 2013 14th International Conference on Ultimate Integration on Silicon (ULIS)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9781467348010
9781467348003
9781467348027
DOI:10.1109/ULIS.2013.6523500