مؤتمر
Design of novel normally-off AlGaN/GaN HEMTs with combined gate recess and floating charge structures
| العنوان: | Design of novel normally-off AlGaN/GaN HEMTs with combined gate recess and floating charge structures |
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| المؤلفون: | Huang, Huolin, Liang, Yung C., Samudra, Ganesh S., Huang, Chih-Fang |
| المصدر: | 2013 IEEE 10th International Conference on Power Electronics and Drive Systems (PEDS) Power Electronics and Drive Systems (PEDS), 2013 IEEE 10th International Conference on. :555-558 Apr, 2013 |
| Relation: | 2013 IEEE 10th International Conference on Power Electronics and Drive Systems (PEDS 2013) |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 9781467317917 9781467317900 9781467317924 |
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| تدمد: | 21645256 21645264 |
| DOI: | 10.1109/PEDS.2013.6527081 |