In situ biasing TEM investigation of resistive switching events in TiO2-based RRAM

التفاصيل البيبلوغرافية
العنوان: In situ biasing TEM investigation of resistive switching events in TiO2-based RRAM
المؤلفون: Jonghan Kwon, Picard, Yoosuf N., Skowronski, Marek, Sharma, Abhishek A., Bain, James A.
المصدر: 2014 IEEE International Reliability Physics Symposium Reliability Physics Symposium, 2014 IEEE International. :5E.5.1-5E.5.5 Jun, 2014
Relation: 2014 IEEE International Reliability Physics Symposium (IRPS)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9781479933174
تدمد:15417026
19381891
DOI:10.1109/IRPS.2014.6860680