Determination of the junction temperature of Gallium Nitride (GaN)-based high power LED under thermal with current loading conditions

التفاصيل البيبلوغرافية
العنوان: Determination of the junction temperature of Gallium Nitride (GaN)-based high power LED under thermal with current loading conditions
المؤلفون: Hsu, Feng-Mao, Su, Yen-Fu, Chiang, Kuo-Ning
المصدر: 2015 International Conference on Electronics Packaging and iMAPS All Asia Conference (ICEP-IAAC) Electronics Packaging and iMAPS All Asia Conference (ICEP-IACC), 2015 International Conference on. :691-694 Apr, 2015
Relation: 2015 International Conference on Electronics Packaging and iMAPS All Asia Conference (ICEP-IAAC)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9784904090121
9784904090138
DOI:10.1109/ICEP-IAAC.2015.7111099