A compact, high-gain Q-band stacked power amplifier in 45nm SOI CMOS with 19.2dBm Psat and 19% PAE

التفاصيل البيبلوغرافية
العنوان: A compact, high-gain Q-band stacked power amplifier in 45nm SOI CMOS with 19.2dBm Psat and 19% PAE
المؤلفون: Tai, W., Ricketts, D.S.
المصدر: 2015 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications (PAWR) Power Amplifiers for Wireless and Radio Applications (PAWR), 2015 IEEE Topical Conference on. :1-3 Jan, 2015
Relation: 2015 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications (PAWR)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9781479955152
DOI:10.1109/PAWR.2015.7139204