Full-zone k · p parametrization for III-As materials

التفاصيل البيبلوغرافية
العنوان: Full-zone k · p parametrization for III-As materials
المؤلفون: Mugny, G., Rideau, D., Triozon, F., Niquet, Y.-M., Kriso, C., Pereira, F.G., Garetto, D., Tavernier, C., Delerue, C.
المصدر: 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Simulation of Semiconductor Processes and Devices (SISPAD), 2015 International Conference on. :28-31 Sep, 2015
Relation: 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9781467378581
9781467378604
9781467378598
تدمد:19461569
19461577
DOI:10.1109/SISPAD.2015.7292250