مؤتمر
Full-zone k · p parametrization for III-As materials
العنوان: | Full-zone k · p parametrization for III-As materials |
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المؤلفون: | Mugny, G., Rideau, D., Triozon, F., Niquet, Y.-M., Kriso, C., Pereira, F.G., Garetto, D., Tavernier, C., Delerue, C. |
المصدر: | 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Simulation of Semiconductor Processes and Devices (SISPAD), 2015 International Conference on. :28-31 Sep, 2015 |
Relation: | 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) |
قاعدة البيانات: | IEEE Xplore Digital Library |
ردمك: | 9781467378581 9781467378604 9781467378598 |
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تدمد: | 19461569 19461577 |
DOI: | 10.1109/SISPAD.2015.7292250 |