مؤتمر
High performance poly Si junctionless transistors with sub-5nm conformally doped layers by molecular monolayer doping and microwave incorporating CO2 laser annealing for 3D stacked ICs applications
| العنوان: | High performance poly Si junctionless transistors with sub-5nm conformally doped layers by molecular monolayer doping and microwave incorporating CO2 laser annealing for 3D stacked ICs applications |
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| المؤلفون: | Lee, Yao-Jen, Cho, Ta-Chun, Sung, Po-Jung, Kao, Kuo-Hsing, Hsueh, Fu-Kuo, Hou, Fu-Ju, Chen, Po-Cheng, Chen, Hsiu-Chih, Wu, Chien-Ting, Hsu, Shu-Han, Chen, Yi-Ju, Huang, Yao-Ming, Hou, Yun-Fang, Huang, Wen-Hsien, Yang, Chih-Chao, Chen, Bo-Yuan, Lin, Kun-Lin, Chen, Min-Cheng, Shen, Chang-Hong, Huang, Guo-Wei, Huang, Kun-Ping, Current, Michael I., Li, Yiming, Samukawa, Seiji, Wu, Wen-Fa, Shieh, Jia-Min, Chao, Tien-Sheng, Yeh, Wen-Kuan |
| المصدر: | 2015 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2015 IEEE International. :6.2.1-6.2.4 Dec, 2015 |
| Relation: | 2015 IEEE International Electron Devices Meeting (IEDM) |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 9781467398947 9781467398930 |
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| تدمد: | 2156017X |
| DOI: | 10.1109/IEDM.2015.7409638 |