دورية أكاديمية
Positive Gate Bias and Temperature-Induced Instability of $\alpha $ -InGaZnO Thin-Film Transistor With ZrLaO Gate Dielectric
| العنوان: | Positive Gate Bias and Temperature-Induced Instability of $\alpha $ -InGaZnO Thin-Film Transistor With ZrLaO Gate Dielectric |
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| المؤلفون: | Huang, X.D., Song, J.Q., Lai, P.T. |
| المصدر: | IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 63(5):1899-1903 May, 2016 |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | تدمد: | 00189383 15579646 |
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| DOI: | 10.1109/TED.2016.2541319 |