مؤتمر
Operation of 4H-SiC Schottky diodes at dV/dt values over 700 kV/μs
| العنوان: | Operation of 4H-SiC Schottky diodes at dV/dt values over 700 kV/μs |
|---|---|
| المؤلفون: | Van Brunt, Edward, Wang, Gangyao, Liu, Jimmy, Pala, Vipindas, Hull, Brett, Richmond, Jim, Palmour, John |
| المصدر: | 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2016 28th International Symposium on. :67-70 Jun, 2016 |
| Relation: | 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) |
| قاعدة البيانات: | IEEE Xplore Digital Library |
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