A two-input 8-transistor SRAM cell with enhanced noise immunity

التفاصيل البيبلوغرافية
العنوان: A two-input 8-transistor SRAM cell with enhanced noise immunity
المؤلفون: Korotkov, Alexander S., Morozov, Dmitry V., Hauer, Johann
المصدر: 2016 International Symposium on Fundamentals of Electrical Engineering (ISFEE) Fundamentals of Electrical Engineering (ISFEE), 2016 International Symposium on. :1-4 Jun, 2016
Relation: 2016 International Symposium on Fundamentals of Electrical Engineering (ISFEE)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9781467395755
9781467395748
DOI:10.1109/ISFEE.2016.7803191