Growth of GaN and AlGaN by high temperature vapor phase epitaxy

التفاصيل البيبلوغرافية
العنوان: Growth of GaN and AlGaN by high temperature vapor phase epitaxy
المؤلفون: Fischer, S., Anders, F., Theis, M., Steude, G., Christmann, T., Hofmann, D.M., Meyer, B.K.
المصدر: Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159) Semiconducting and insulating materials Semiconducting and Insulating Materials, 1998. (SIMC-X) Proceedings of the 10th Conference on. :11-14 1998
Relation: Proceedings of 10th International Semiconducting and Insulating Materials
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:0780343549
9780780343542
DOI:10.1109/SIM.1998.785066