Edge FN stress induced leakage current in tunnel oxides

التفاصيل البيبلوغرافية
العنوان: Edge FN stress induced leakage current in tunnel oxides
المؤلفون: Nian-Kai Zous, Yeh, C.C., Tsai, C.W., Chiang, L.P., Tahui Wang
المصدر: 1999 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers. (Cat. No.99TH8453) VLSI technology, systems, and applications VLSI Technology, Systems, and Applications, 1999. International Symposium on. :262-265 1999
Relation: Proceedings of International Symposium on VLSI Technology Systems and Applications
قاعدة البيانات: IEEE Xplore Digital Library