CVD TaN barrier for copper metallization and DRAM bottom electrode

التفاصيل البيبلوغرافية
العنوان: CVD TaN barrier for copper metallization and DRAM bottom electrode
المؤلفون: Paranjpe, A., Bubber, R., Velo, L., Shang, G., Gopinath, S., Dalton, J., Moslehi, M.
المصدر: Proceedings of the IEEE 1999 International Interconnect Technology Conference (Cat. No.99EX247) Interconnect technology Interconnect Technology, 1999. IEEE International Conference. :119-121 1999
Relation: Proceedings of the IEEE 1999 International Interconnect Technology Conference
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:0780351746
9780780351745
DOI:10.1109/IITC.1999.787096