High & Low Dose USJ Implantation into Ge-Epi on Si Wafers: Dopant Activation, Damage Recovery and Mobility Effects

التفاصيل البيبلوغرافية
العنوان:	High & Low Dose USJ Implantation into Ge-Epi on Si Wafers: Dopant Activation, Damage Recovery and Mobility Effects
المؤلفون:	Borland, John, Sugitani, Michiro, Herman, Joshua, Huet, Karium, Johnson, Walt, Yu, Lu, Joshi, Abhijeet
المصدر:	2016 21st International Conference on Ion Implantation Technology (IIT) Ion Implantation Technology (IIT), 2016 21st International Conference on. :1-4 Sep, 2016
Relation:	2016 21st International Conference on Ion Implantation Technology (IIT)
قاعدة البيانات:	IEEE Xplore Digital Library

الوصف
ردمك:	9781509020249
DOI:	10.1109/IIT.2016.7882875