دورية أكاديمية
Physically Based Evaluation of Effect of Buried Oxide on Surface Roughness Scattering Limited Hole Mobility in Ultrathin GeOI MOSFETs
| العنوان: | Physically Based Evaluation of Effect of Buried Oxide on Surface Roughness Scattering Limited Hole Mobility in Ultrathin GeOI MOSFETs |
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| المؤلفون: | Wang, X., Xiang, J., Han, K., Wang, S., Luo, J., Zhao, C., Ye, T., Radamson, H.H., Simoen, E., Wang, W. |
| المصدر: | IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 64(6):2611-2616 Jun, 2017 |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | تدمد: | 00189383 15579646 |
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| DOI: | 10.1109/TED.2017.2688489 |