التفاصيل البيبلوغرافية
| العنوان: |
Simulation of 4H-SiC trench junction barrier Schottky diodes with high-k dielectrics |
| المؤلفون: |
Yang, Shuai, Song, Qing Wen, Tang, Xiao Yan, Zhang, Yi Meng, Zhang, Yu Ming, Zhang, Yi Men, Yuan, Hao, Sun, Qiu Jie |
| المصدر: |
2016 European Conference on Silicon Carbide & Related Materials (ECSCRM) Silicon Carbide & Related Materials (ECSCRM), European Conference on. :1-1 Sep, 2016 |
| Relation: |
2016 European Conference on Silicon Carbide & Related Materials (ECSCRM) |
| قاعدة البيانات: |
IEEE Xplore Digital Library |
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