التفاصيل البيبلوغرافية
العنوان: |
Silicon tunnel FET with average subthreshold slope of 55mV/dec at low drain currents |
المؤلفون: |
Narimani, K., Glass, S., Rieger, T., Bernardy, P., von den Driesch, N., Mantl, S., Zhao, Q.T. |
المصدر: |
2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) Ultimate Integration on Silicon (EUROSOI-ULIS), 2017 Joint International EUROSOI Workshop and International Conference on. :75-78 Apr, 2017 |
Relation: |
2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) |
قاعدة البيانات: |
IEEE Xplore Digital Library |