Silicon tunnel FET with average subthreshold slope of 55mV/dec at low drain currents

التفاصيل البيبلوغرافية
العنوان: Silicon tunnel FET with average subthreshold slope of 55mV/dec at low drain currents
المؤلفون: Narimani, K., Glass, S., Rieger, T., Bernardy, P., von den Driesch, N., Mantl, S., Zhao, Q.T.
المصدر: 2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) Ultimate Integration on Silicon (EUROSOI-ULIS), 2017 Joint International EUROSOI Workshop and International Conference on. :75-78 Apr, 2017
Relation: 2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9781509053131
تدمد:24729132
DOI:10.1109/ULIS.2017.7962605