Gate oxide yield improvement for 0.18μm power semiconductor devices with deep trenches: DP: Discrete and power devices

التفاصيل البيبلوغرافية
العنوان:	Gate oxide yield improvement for 0.18μm power semiconductor devices with deep trenches: DP: Discrete and power devices
المؤلفون:	Greenwood, B., Suhwanov, A., Daniel, D., Menon, S., Price, D., Hose, S., Guo, J., Piatt, G., Lu, M., Watanabe, Y., Kanuma, Y., Takada, R., Sheng, L., Gambino, J. P., Whear, Oli
المصدر:	2017 28th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC) Advanced Semiconductor Manufacturing Conference (ASMC), 2017 28th Annual SEMI. :346-351 May, 2017
Relation:	2017 28th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)
قاعدة البيانات:	IEEE Xplore Digital Library