مؤتمر
Gate oxide yield improvement for 0.18μm power semiconductor devices with deep trenches: DP: Discrete and power devices
العنوان: | Gate oxide yield improvement for 0.18μm power semiconductor devices with deep trenches: DP: Discrete and power devices |
---|---|
المؤلفون: | Greenwood, B., Suhwanov, A., Daniel, D., Menon, S., Price, D., Hose, S., Guo, J., Piatt, G., Lu, M., Watanabe, Y., Kanuma, Y., Takada, R., Sheng, L., Gambino, J. P., Whear, Oli |
المصدر: | 2017 28th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC) Advanced Semiconductor Manufacturing Conference (ASMC), 2017 28th Annual SEMI. :346-351 May, 2017 |
Relation: | 2017 28th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC) |
قاعدة البيانات: | IEEE Xplore Digital Library |
كن أول من يترك تعليقا!