Highly manufacturable 7nm FinFET technology featuring EUV lithography for low power and high performance applications

التفاصيل البيبلوغرافية
العنوان:	Highly manufacturable 7nm FinFET technology featuring EUV lithography for low power and high performance applications
المؤلفون:	Ha, Daewon, Yang, C., Lee, J., Lee, S., Lee, S. H., Seo, K.-I., Oh, H. S., Hwang, E. C., Do, S. W., Park, S. C., Sun, M.-C., Kim, D. H., Lee, J. H., Kang, M. I., Ha, S.-S., Choi, D. Y., Jun, H., Shin, H. J., Kim, Y. J., Moon, C. W., Cho, Y. W., Park, S. H., Son, Y., Park, J. Y., Lee, B. C., Kim, C., Oh, Y. M., Park, J. S., Kim, S. S., Kim, M. C., Hwang, K. H., Nam, S. W., Maeda, S., Kim, D.-W., Lee, J.-H., Liang, M. S., Jung, E. S.
المصدر:	2017 Symposium on VLSI Technology VLSI Technology, 2017 Symposium on. :T68-T69 Jun, 2017
Relation:	2017 Symposium on VLSI Technology
قاعدة البيانات:	IEEE Xplore Digital Library