Range studies of aluminum, boron, and nitrogen implants in 4H-SiC

التفاصيل البيبلوغرافية
العنوان: Range studies of aluminum, boron, and nitrogen implants in 4H-SiC
المؤلفون: Stief, R., Lucassen, M., Schork, R., Ryssel, H., Holzlein, K.-H., Rupp, R., Stephani, D.
المصدر: 1998 International Conference on Ion Implantation Technology. Proceedings (Cat. No.98EX144) Ion implantation technology Ion Implantation Technology Proceedings, 1998 International Conference on. 2:760-763 vol.2 1998
Relation: 1998 International Conference on Ion Implantation Technology. Proceedings. Ion Implantation Technology - 98
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:078034538X
9780780345386
DOI:10.1109/IIT.1998.813778