مؤتمر
A novel trench DRAM cell with a vertical access transistor and buried strap (VERI BEST) for 4 Gb/16 Gb
| العنوان: | A novel trench DRAM cell with a vertical access transistor and buried strap (VERI BEST) for 4 Gb/16 Gb |
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| المؤلفون: | Gruening, U., Radens, C.J., Mandelman, J.A., Michaelis, A., Seitz, M., Arnold, N., Lea, D., Casarotto, D., Knorr, A., Halle, S., Ivers, T.H., Economikos, L., Kudelka, S., Rahn, S., Tews, H., Lee, H., Divakaruni, R., Welser, J.J., Furukawa, T., Kanarsky, T.S., Alsmeier, J., Bronner, G.B. |
| المصدر: | International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318) Electron devices Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International. :25-28 1999 |
| Relation: | International Electron Devices Meeting 1999. Technical Digest |
| قاعدة البيانات: | IEEE Xplore Digital Library |
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