A novel sidewall strained-Si channel nMOSFET

التفاصيل البيبلوغرافية
العنوان: A novel sidewall strained-Si channel nMOSFET
المؤلفون: Liu, K.C., Wang, X., Quinones, E., Chen, X., Chen, X.D., Kencke, D., Anantharam, B., Chang, R.D., Ray, S.K., Oswal, S.K., Tu, C.Y., Banerjee, S.K.
المصدر: International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318) Electron devices Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International. :63-66 1999
Relation: International Electron Devices Meeting 1999. Technical Digest
قاعدة البيانات: IEEE Xplore Digital Library