Ge nanowire FETs with HfZrOx ferroelectric gate stack exhibiting SS of sub-60 mV/dec and biasing effects on ferroelectric reliability

التفاصيل البيبلوغرافية
العنوان:	Ge nanowire FETs with HfZrOx ferroelectric gate stack exhibiting SS of sub-60 mV/dec and biasing effects on ferroelectric reliability
المؤلفون:	Su, C.-J., Hong, T.-C., Tsou, Y.-C., Hou, F.-J., Sung, P.-J., Yeh, M.-S., Wan, C.-C., Kao, K.-H., Tang, Y.-T., Chiu, C.-H., Wang, C.-J., Chung, S.-T., You, T.-Y., Huang, Y.-C., Wu, C.-T., Lin, K.-L., Luo, G.-L., Huang, K.-P., Lee, Y.-J., Chao, T.-S., Wu, W.-F., Huang, G.-W., Shieh, J.-M., Yeh, W.-K., Wang, Y.-H.
المصدر:	2017 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2017 IEEE International. :15.4.1-15.4.4 Dec, 2017
Relation:	2017 IEEE International Electron Devices Meeting (IEDM)
قاعدة البيانات:	IEEE Xplore Digital Library