مؤتمر
Comprehensive study of Ga activation in Si, SiGe and Ge with 5 × 10−10 Ω·cm2 contact resistivity achieved on Ga doped Ge using nanosecond laser activation
| العنوان: | Comprehensive study of Ga activation in Si, SiGe and Ge with 5 × 10−10 Ω·cm2 contact resistivity achieved on Ga doped Ge using nanosecond laser activation |
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| المؤلفون: | Wang, Lin-Lin, Yu, Hao, Schaekers, M., Everaert, J.-L., Franquet, A., Douhard, B., Date, L., del Agua Borniquel, J., Hollar, K., Khaja, F. A., Aderhold, W., Mayur, A. J., Lee, J. Y., van Meer, H., Mocuta, D., Horiguchi, N., Collaert, N., De Meyer, K., Jiang, Yu-Long |
| المصدر: | 2017 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2017 IEEE International. :22.4.1-22.4.4 Dec, 2017 |
| Relation: | 2017 IEEE International Electron Devices Meeting (IEDM) |
| قاعدة البيانات: | IEEE Xplore Digital Library |
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