A systematic study of gate dielectric TDDB in FinFET technology

التفاصيل البيبلوغرافية
العنوان: A systematic study of gate dielectric TDDB in FinFET technology
المؤلفون: Kim, Hyunjin, Jin, Minjung, Sagong, Hyunchul, Kim, Jinju, Jung, Ukjin, Choi, Minhyuck, Park, Junekyun, Shin, Sangchul, Pae, Sangwoo
المصدر: 2018 IEEE International Reliability Physics Symposium (IRPS) Reliability Physics Symposium (IRPS), 2018 IEEE International. :4A.4-1-4A.4-4 Mar, 2018
Relation: 2018 IEEE International Reliability Physics Symposium (IRPS)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9781538654798
تدمد:19381891
DOI:10.1109/IRPS.2018.8353577