On the TSV delamination risk dependence on TSV distance and silicon crystal orientation

التفاصيل البيبلوغرافية
العنوان: On the TSV delamination risk dependence on TSV distance and silicon crystal orientation
المؤلفون: Auersperg, J., Albrecht, J., Rzepka, S.
المصدر: 2018 19th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE) Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE), 2018 19th International Conference on. :1-4 Apr, 2018
Relation: 2018 19th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)
قاعدة البيانات: IEEE Xplore Digital Library