دورية أكاديمية
Impact of c-Si Surface Passivating Layer Thickness on n+ Laser-Doped Contacts Based on Silicon Carbide Films
العنوان: | Impact of c-Si Surface Passivating Layer Thickness on n+ Laser-Doped Contacts Based on Silicon Carbide Films |
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المؤلفون: | Lopez, G., Jin, C., Martin, I., Alcubilla, R. |
المصدر: | IEEE Journal of Photovoltaics IEEE J. Photovoltaics Photovoltaics, IEEE Journal of. 8(4):976-981 Jul, 2018 |
قاعدة البيانات: | IEEE Xplore Digital Library |
تدمد: | 21563381 21563403 |
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DOI: | 10.1109/JPHOTOV.2018.2836963 |