مؤتمر
A 0.4 /spl mu/m 3.3 V 1T1C 4 Mb nonvolatile ferroelectric RAM with fixed bit-line reference voltage scheme and data protection circuit
العنوان: | A 0.4 /spl mu/m 3.3 V 1T1C 4 Mb nonvolatile ferroelectric RAM with fixed bit-line reference voltage scheme and data protection circuit |
---|---|
المؤلفون: | Byung-Gil Jeon, Mun-Kyu Choi, Yoonjong Song, Seung-Kyu Oh, Yeonbae Chung, Kang-Deog Suh, Kinam Kim |
المصدر: | 2000 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.00CH37056) Solid-state circuits Solid-State Circuits Conference, 2000. Digest of Technical Papers. ISSCC. 2000 IEEE International. :272-273 2000 |
Relation: | 2000 IEEE International Solid-State Circuits Conference. Digest of Technical Papers |
قاعدة البيانات: | IEEE Xplore Digital Library |
ردمك: | 0780358538 9780780358539 |
---|---|
تدمد: | 01936530 |
DOI: | 10.1109/ISSCC.2000.839781 |