مؤتمر
A1GaN/GaN Field Effect Transistors Based on Lateral Schottky Barrier Gates as Millimeter Wave Detectors
| العنوان: | A1GaN/GaN Field Effect Transistors Based on Lateral Schottky Barrier Gates as Millimeter Wave Detectors |
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| المؤلفون: | Sai, P., But, D. B., Nowakowski-Szkudlarek, K., Przybytek, J., Prystawko, P., Yahniuk, I., Wisniewski, P., Stonio, B., Slowikowski, M., Rumyantsev, S. L., Knap, W., Cywinski, G. |
| المصدر: | 2018 43rd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz) Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2018 43rd International Conference on. :1-2 Sep, 2018 |
| Relation: | 2018 43rd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz2018) |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 9781538638095 9781538638088 |
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| تدمد: | 21622035 |
| DOI: | 10.1109/IRMMW-THz.2018.8510420 |