Ar RIE to improve the source/drain contact in GaN HEMT

التفاصيل البيبلوغرافية
العنوان: Ar RIE to improve the source/drain contact in GaN HEMT
المؤلفون: Zhu, K.M., Deng, J.N., Cao, X.Y., Wan, J.
المصدر: 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) Solid-State and Integrated Circuit Technology (ICSICT), 2018 14th IEEE International Conference on. :1-3 Oct, 2018
Relation: 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9781538644409
9781538644393
9781538644416
DOI:10.1109/ICSICT.2018.8565005