دورية أكاديمية
Phosphorous-Doped Silicon Carbide as Front-Side Full-Area Passivating Contact for Double-Side Contacted c-Si Solar Cells
| العنوان: | Phosphorous-Doped Silicon Carbide as Front-Side Full-Area Passivating Contact for Double-Side Contacted c-Si Solar Cells |
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| المؤلفون: | Ingenito, A., Nogay, G., Stuckelberger, J., Wyss, P., Gnocchi, L., Allebe, C., Horzel, J., Despeisse, M., Haug, F., Loper, P., Ballif, C. |
| المصدر: | IEEE Journal of Photovoltaics IEEE J. Photovoltaics Photovoltaics, IEEE Journal of. 9(2):346-354 Mar, 2019 |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | تدمد: | 21563381 21563403 |
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| DOI: | 10.1109/JPHOTOV.2018.2886234 |