Intel 22nm FinFET (22FFL) Process Technology for RF and mm Wave Applications and Circuit Design Optimization for FinFET Technology

التفاصيل البيبلوغرافية
العنوان: Intel 22nm FinFET (22FFL) Process Technology for RF and mm Wave Applications and Circuit Design Optimization for FinFET Technology
المؤلفون: Lee, H.-J., Rami, S., Ravikumar, S., Neeli, V., Phoa, K., Sell, B., Zhang, Y.
المصدر: 2018 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2018 IEEE International. :14.1.1-14.1.4 Dec, 2018
Relation: 2018 IEEE International Electron Devices Meeting (IEDM)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9781728119878
تدمد:2156017X
DOI:10.1109/IEDM.2018.8614490