دورية أكاديمية
Investigation of Ta2O5 as an Alternative High- ${k}$ Dielectric for InAlN/GaN MOS-HEMT on Si
| العنوان: | Investigation of Ta2O5 as an Alternative High- ${k}$ Dielectric for InAlN/GaN MOS-HEMT on Si |
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| المؤلفون: | Kumar, S., Kumar, H., Vura, S., Pratiyush, A.S., Charan, V.S., Dolmanan, S.B., Tripathy, S., Muralidharan, R., Nath, D.N. |
| المصدر: | IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 66(3):1230-1235 Mar, 2019 |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | تدمد: | 00189383 15579646 |
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| DOI: | 10.1109/TED.2019.2893288 |