مؤتمر
Localized Layout Effect Related Reliability Approach in 8nm FinFETs Technology: From Transistor to Circuit
| العنوان: | Localized Layout Effect Related Reliability Approach in 8nm FinFETs Technology: From Transistor to Circuit |
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| المؤلفون: | Jiang, Hai, Sagong, Hyunchul, Kim, Jinju, Park, Junekyun, Shin, Sangchul, Pae, Sangwoo |
| المصدر: | 2019 IEEE International Reliability Physics Symposium (IRPS) Reliability Physics Symposium (IRPS), 2019 IEEE International. :1-5 Mar, 2019 |
| Relation: | 2019 IEEE International Reliability Physics Symposium (IRPS) |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 9781538695043 |
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| تدمد: | 19381891 |
| DOI: | 10.1109/IRPS.2019.8720409 |