دورية أكاديمية
Vertical Ga2O3 Schottky Barrier Diodes With Guard Ring Formed by Nitrogen-Ion Implantation
| العنوان: | Vertical Ga2O3 Schottky Barrier Diodes With Guard Ring Formed by Nitrogen-Ion Implantation |
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| المؤلفون: | Lin, C., Yuda, Y., Wong, M.H., Sato, M., Takekawa, N., Konishi, K., Watahiki, T., Yamamuka, M., Murakami, H., Kumagai, Y., Higashiwaki, M. |
| المصدر: | IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 40(9):1487-1490 Sep, 2019 |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | تدمد: | 07413106 15580563 |
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| DOI: | 10.1109/LED.2019.2927790 |