دورية أكاديمية
Monte Carlo simulations of high energy electrons and holes in Si-n-MOSFET's
| العنوان: | Monte Carlo simulations of high energy electrons and holes in Si-n-MOSFET's |
|---|---|
| المؤلفون: | Venturi, F., Sangiorgi, E., Brunetti, R., Quade, W., Jacoboni, C., Ricco, B. |
| المصدر: | IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems IEEE Trans. Comput.-Aided Des. Integr. Circuits Syst. Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on. 10(10):1276-1286 Oct, 1991 |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | تدمد: | 02780070 19374151 |
|---|---|
| DOI: | 10.1109/43.88923 |