22nm STT-MRAM for Reflow and Automotive Uses with High Yield, Reliability, and Magnetic Immunity and with Performance and Shielding Options

التفاصيل البيبلوغرافية
العنوان: 22nm STT-MRAM for Reflow and Automotive Uses with High Yield, Reliability, and Magnetic Immunity and with Performance and Shielding Options
المؤلفون: Gallagher, W.J., Chien, Eric, Chiang, Tien-Wei, Huang, Jian-Cheng, Shih, Meng-Chun, Wang, C.Y., Weng, Chih-Hui, Chen, Sean, Bair, Christine, Lee, George, Shih, Yi-Chun, Lee, Chia-Fu, Lee, Po-Hao, Wang, Roger, Shen, Kuei- Hung, Wu, J. J., Wang, Wayne, Chuang, Harry
المصدر: 2019 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2019 IEEE International. :2.7.1-2.7.4 Dec, 2019
Relation: 2019 IEEE International Electron Devices Meeting (IEDM)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9781728140322
تدمد:2156017X
DOI:10.1109/IEDM19573.2019.8993469