Three-Layer BEOL Process Integration with Supervia and Self-Aligned-Block Options for the 3 nm Node

التفاصيل البيبلوغرافية
العنوان:	Three-Layer BEOL Process Integration with Supervia and Self-Aligned-Block Options for the 3 nm Node
المؤلفون:	Vega-Gonzalez, V., Wilson, C. J., Briggs, B., Decoster, S., Versluijs, J., Lesniewska, A., Paolillo, S., Baert, R., Puliyalil, H., Bekaert, J., Kesters, E., Le, Q. T., Lorant, C., Varela P., O., Teugels, L., Heylen, N., El-Mekki, Z., van der Veen, M., Webers, T., Vats, H., Rynders, L., Cupak, M., Uk-Lee, J., Drissi, Y., Halipre, L., Charley, A.-L., Verdonck, P., Witters, T., Gompel, S. V., Kimura, Y., Jourdan, N., Ciofi, I., Gupta, A., Contino, A., Boccardi, G., Lariviere, S., Dupas, L., De-Wachter, B., Vancoille, E., Lazzarino, F., Ercken, M, Debacker, P., Kim, R., Trivkovic, D., Croes, K., Leray, P., Dillemans, L., Chen, Y.-F., Tokei, Z.
المصدر:	2019 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2019 IEEE International. :19.3.1-19.3.4 Dec, 2019
Relation:	2019 IEEE International Electron Devices Meeting (IEDM)
قاعدة البيانات:	IEEE Xplore Digital Library