Bias-Induced Threshold Voltage Instability and Interface Trap Density Extraction of 4H-SiC MOSFETs

التفاصيل البيبلوغرافية
العنوان: Bias-Induced Threshold Voltage Instability and Interface Trap Density Extraction of 4H-SiC MOSFETs
المؤلفون: Yu, Susanna, Kang, Minseok, Liu, Tianshi, Xing, Diang, Salemi, Arash, White, Marvin H., Agarwal, Anant K.
المصدر: 2019 IEEE 7th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) Wide Bandgap Power Devices and Applications (WiPDA), 2019 IEEE 7th Workshop on. :420-424 Oct, 2019
Relation: 2019 IEEE 7th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9781728137612
9781728137605
DOI:10.1109/WiPDA46397.2019.8998931