مؤتمر
Novel high drain breakdown voltage AlGaN/GaN HFETs using selective thermal oxidation process
| العنوان: | Novel high drain breakdown voltage AlGaN/GaN HFETs using selective thermal oxidation process |
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| المؤلفون: | Masato, H., Ikeda, Y., Matsuno, T., Inoue, K., Nishii, K. |
| المصدر: | International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138) Electron devices meeting Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International. :377-380 2000 |
| Relation: | International Electron Devices Meeting. Technical Digest. IEDM |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | ردمك: | 0780364384 9780780364387 |
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| DOI: | 10.1109/IEDM.2000.904335 |