A 3.3 V 1 Gb multi-level NAND flash memory with non-uniform threshold voltage distribution

التفاصيل البيبلوغرافية
العنوان: A 3.3 V 1 Gb multi-level NAND flash memory with non-uniform threshold voltage distribution
المؤلفون: Taehee Cho, Young-Taek Lee, Euncheol Kim, Jinwook Lee, Sunmi Choi, Seungjae Lee, Dong-Hwan Kim, Wook-Kee Han, Young-Ho Lim, Jae-Duk Lee, Jung-Dal Choi, Kang-Deog Suh
المصدر: 2001 IEEE International Solid-State Circuits Conference. Digest of Technical Papers. ISSCC (Cat. No.01CH37177) Solid-state circuits conference Solid-State Circuits Conference, 2001. Digest of Technical Papers. ISSCC. 2001 IEEE International. :28-29 2001
Relation: 2001 IEEE International Solid-State Circuits Conference. Digest of Technical Papers
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:0780366085
9780780366084
تدمد:01936530
DOI:10.1109/ISSCC.2001.912417