Trap Density Modulation for IO FinFET NBTI Improvement

التفاصيل البيبلوغرافية
العنوان: Trap Density Modulation for IO FinFET NBTI Improvement
المؤلفون: Ranjan, Rakesh, LaRow, Charles B., Lee, Ki-Don, Kang, Minhyo, Perepa, Pavitra R., Rahman, M. Shahriar, Lee, Bong Ki, Moreau, David, Cariss-Daniels, Carolyn, Basford, Timothy, Callahan, Colby, Nguyen, Maihan, Choi, Gil Heyun, Sagong, Hyunchul, Rhee, HwaSung
المصدر: 2020 IEEE International Reliability Physics Symposium (IRPS) Reliability Physics Symposium (IRPS), 2020 IEEE International. :1-5 Apr, 2020
Relation: 2020 IEEE International Reliability Physics Symposium (IRPS)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9781728131993
تدمد:19381891
DOI:10.1109/IRPS45951.2020.9129066