Threshold Voltage Instability of Commercial 1.2 kV SiC Power MOSFETs

التفاصيل البيبلوغرافية
العنوان: Threshold Voltage Instability of Commercial 1.2 kV SiC Power MOSFETs
المؤلفون: Yu, Susanna, Liu, Tianshi, Zhu, Shengnan, Xing, Diang, Salemi, Arash, Kang, Minseok, Booth, Kristen, White, Marvin H., Agarwal, Anant K.
المصدر: 2020 IEEE International Reliability Physics Symposium (IRPS) Reliability Physics Symposium (IRPS), 2020 IEEE International. :1-5 Apr, 2020
Relation: 2020 IEEE International Reliability Physics Symposium (IRPS)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9781728131993
تدمد:19381891
DOI:10.1109/IRPS45951.2020.9129071