التفاصيل البيبلوغرافية
| العنوان: |
Gate Oxide Reliability Studies of Commercial 1.2 kV 4H-SiC Power MOSFETs |
| المؤلفون: |
Liu, Tianshi, Zhu, Shengnan, Yu, Susanna, Xing, Diang, Salemi, Arash, Kang, Minseok, Booth, Kristen, White, Marvin H., Agarwal, Anant K. |
| المصدر: |
2020 IEEE International Reliability Physics Symposium (IRPS) Reliability Physics Symposium (IRPS), 2020 IEEE International. :1-5 Apr, 2020 |
| Relation: |
2020 IEEE International Reliability Physics Symposium (IRPS) |
| قاعدة البيانات: |
IEEE Xplore Digital Library |
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