دورية أكاديمية
Elimination of the Low Resistivity of Si Substrates in GaN HEMTs by Introducing a SiC Intermediate and a Thick Nitride Layer
| العنوان: | Elimination of the Low Resistivity of Si Substrates in GaN HEMTs by Introducing a SiC Intermediate and a Thick Nitride Layer |
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| المؤلفون: | Bose, A., Biswas, D., Hishiki, S., Ouchi, S., Kitahara, K., Kawamura, K., Wakejima, A. |
| المصدر: | IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 41(10):1480-1483 Oct, 2020 |
| قاعدة البيانات: | IEEE Xplore Digital Library |
Full Text Finder | تدمد: | 07413106 15580563 |
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| DOI: | 10.1109/LED.2020.3019482 |