التفاصيل البيبلوغرافية
العنوان: |
Properties of Conductive Oxygen Vacancies and Compact Modeling of IV Characteristics in HfO2 Resistive Random-Access-Memories |
المؤلفون: |
Park, Junsung, Kim, Min-Jae, Jang, Jae-Hyung, Hong, Sung-Min |
المصدر: |
2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Simulation of Semiconductor Processes and Devices (SISPAD), 2020 International Conference o. :217-220 Sep, 2020 |
Relation: |
2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) |
قاعدة البيانات: |
IEEE Xplore Digital Library |