مؤتمر
Properties of Conductive Oxygen Vacancies and Compact Modeling of IV Characteristics in HfO2 Resistive Random-Access-Memories
العنوان: | Properties of Conductive Oxygen Vacancies and Compact Modeling of IV Characteristics in HfO2 Resistive Random-Access-Memories |
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المؤلفون: | Park, Junsung, Kim, Min-Jae, Jang, Jae-Hyung, Hong, Sung-Min |
المصدر: | 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Simulation of Semiconductor Processes and Devices (SISPAD), 2020 International Conference o. :217-220 Sep, 2020 |
Relation: | 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) |
قاعدة البيانات: | IEEE Xplore Digital Library |
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