High Performance β-Ga2O3 vertical Schottky Barrier Diodes

التفاصيل البيبلوغرافية
العنوان: High Performance β-Ga2O3 vertical Schottky Barrier Diodes
المؤلفون: Wang, Y. G., Lv, Y. J., Dun, S. B., Zhou, X. Y., Sun, Z. F., Liu, H. Y., Liang, S. X., Feng, H., Cai, S. J.
المصدر: 2020 17th China International Forum on Solid State Lighting & 2020 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) Solid State Lighting & 2020 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS), 2020 17th China International Forum on. :224-227 Nov, 2020
Relation: 2020 17th China International Forum on Solid State Lighting & 2020 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)
قاعدة البيانات: IEEE Xplore Digital Library
الوصف
ردمك:9780738111889
DOI:10.1109/SSLChinaIFWS51786.2020.9308713